+971 4 262 3337
Switch to Dark Mode

Micron Single Rank Memory Module 8GB PC4-19200, DDR4-2400MHz, ECC Registered, CL17 288-Pin DIMM, 1.2V Low-power, | MTA9ASF1G72PZ-2G3B1

Model: MTA9ASF1G72PZ-2G3B1
SKU: 38155
Report incorrect or inappropriate product information.
  Out of Stock
Notify Me When in Stock

Report incorrect or inappropriate product information.



Description for Micron Single Rank Memory Module 8GB PC4-19200, DDR4-2400MHz, ECC Registered, CL17 288-Pin DIMM, 1.2V Low-power, | MTA9ASF1G72PZ-2G3B1

Description
 
High-speed DDR4 SDRAM modules use DDR4 SDRAM devices with two or four internal memory bank groups. DDR4 SDRAM modules utilizing 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM devices have two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM modules benefit from DDR4 SDRAM's use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bitwide, four-clock data transfer at the internal DRAM core and eight corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O pins.DDR4 modules use two sets of differential signals: DQS_t and DQS_c to capture data and CK_t and CK_c to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.

Key Features

  • DDR4 functionality and operations supported
  • 288-pin, registered dual in-line memory module (RDIMM)
  • Fast data transfer rates: PC4-2666 or PC4-2400
  • 8GB (1 Gif x 72)
  • VDD = 1.20V (NOM)
  • VPP = 2.5V (NOM)
  • VDDSPD = 2.5V (NOM)
  • Supports ECC error detection and correction
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Gold edge contacts
  • Halogen-free
  • Fly-by topology
  • Terminated control, command, and address bus

 

Technical Attributes

Read More

Specifications for Micron Single Rank Memory Module 8GB PC4-19200, DDR4-2400MHz, ECC Registered, CL17 288-Pin DIMM, 1.2V Low-power, | MTA9ASF1G72PZ-2G3B1

General
Model
  • MTA9ASF1G72PZ-2G3B1
Microless SKU
  • 38155
Date first available
  • 21 September, 2019
Shipping Weight
  • 1.10 Kg
Capacity
  • 8 GB
Memory Speed
  • 2400
Memory Type
  • DDR4

Similar Products



Reviews for Micron Single Rank Memory Module 8GB PC4-19200, DDR4-2400MHz, ECC Registered, CL17 288-Pin DIMM, 1.2V Low-power, | MTA9ASF1G72PZ-2G3B1

0
No reviews yet
Be the first to review this product

Thank you for rating!
Write a full review.
Select images